PART |
Description |
Maker |
MGFC40V5964A |
5.9-6.4 GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC40V5964A C405964A |
5.9 - 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET From old datasheet system 5.9~6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
STK401-010 STK400-010 STK401-210 STK400-100 STK400 |
3ch AF Power Amplifier(Split Power Supply) 10W 10W 10W,THD=0.4% 3通道自动对焦功率放大器(斯普利特电源0W0W的功0W,总谐波失真\u003d 0.4
|
Sanyo Electric Co., Ltd. Sanyo Electric Co.,Ltd. ETC SANYO[Sanyo Semicon Device]
|
TA040-060-40-40 |
4 - 6 GHz 10W Amplifier
|
Transcom, Inc.
|
PE8312 |
N FEMALE ISOLATOR 4.8 GHz 10W
|
Pasternack Enterprises, Inc.
|
MGFC40V7785A |
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC40V7177B |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC40V5258 |
5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET 5.2 - 5.8GHz频段0W的内部匹配砷化镓场效应管
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
MGFC40V6472A C406472A |
6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET From old datasheet system
|
http:// MITSUBISHI[Mitsubishi Electric Semiconductor]
|